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TetraFET D1027UK METAL GATE RF SILICON FET MECHANICAL DATA C (2 pls) B G (typ) 2 1 H D 3 P (2 pls) A 5 4 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W - 28V - 175MHz PUSH-PULL FEATURES * SIMPLIFIED AMPLIFIER DESIGN E (4 pls) F I N M O J K * SUITABLE FOR BROAD BAND APPLICATIONS DRAIN 1 GATE 2 DR PIN 1 PIN 3 PIN 5 SOURCE (COMMON) DRAIN 2 GATE 1 DIM A B C D E F G H I J K M N O P Millimetres 19.05 10.77 45 9.78 5.71 27.94 1.52R 10.16 22.22 0.13 2.72 1.70 5.08 34.03 1.57R Tol. 0.50 0.13 5 0.13 0.13 0.13 0.13 0.13 MAX 0.02 0.13 0.13 0.50 0.13 0.08 PIN 2 PIN 4 * LOW Crss * SIMPLE BIAS CIRCUITS Inches 0.75 0.424 45 0.385 0.225 1.100 0.060R 0.400 0.875 0.005 0.107 0.067 0.200 1.340 0.062R Tol. 0.020 0.005 5 0.005 0.005 0.005 0.005 0.005 MAX 0.001 0.005 0.005 0.020 0.005 0.003 * LOW NOISE * HIGH GAIN - 13 dB MINIMUM APPLICATIONS * VHF/UHF COMMUNICATIONS from 1 MHz to 200 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain - Source Breakdown Voltage Gate - Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 438W 70V 20V 30A -65 to 150C 200C Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 2/00 D1027UK ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter Test Conditions Min. PER SIDE BVDSS IDSS IGSS VGS(th) gfs Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Gate Threshold Voltage* Forward Transconductance* Gate Threshold Voltage Matching Between Sides VGS = 0 VDS = 28V VGS = 20V ID = 10mA VDS = 10V ID = 10mA ID = 100mA VGS = 0 VDS = 0 VDS = VGS ID = 6A VDS = VGS 1 4.8 70 Typ. Max. Unit V 6 1 7 mA mA V mhos VGS(th)match 0.1 V TOTAL DEVICE GPS Common Source Power Gain Drain Efficiency Load Mismatch Tolerance Input Capacitance Output Capacitance h PO = 150W VDS = 28V f = 175MHz IDQ = 2.4A 13 50 20:1 VGS = -5V f = 1MHz VGS = 0 VGS = 0 f = 1MHz f = 1MHz 360 180 15 dB % -- pF pF pF VSWR Ciss Coss Crss PER SIDE VDS = 28V VDS = 28V Reverse Transfer Capacitance VDS = 28V * Pulse Test: Pulse Duration = 300 ms , Duty Cycle 2% HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. THERMAL DATA RTHj-case Thermal Resistance Junction - Case Max. 0.4C / W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 2/00 D1027UK 400 350 300 250 P out 100 90 80 70 Drain Efficiency P out 400 350 300 250 200 % W f = 175MHz Idq = 2A Vds = 28V 20 18 Gain 200 W 60 50 f = 175MHz Idq = 2A Vds = 28V 16 dB 150 100 50 0 0 2 4 6 8 10 P in W Pout Drain Efficiency 150 100 50 0 0 2 4 6 8 10 P in W 2nd harmonic = -28dBc Pout Gain 40 30 14 12 14 16 18 20 20 12 14 16 18 12 20 3rd harmonic = -40dBc output at 350W Figure 1 - Power Output and Efficiency vs. Power Input. -20 Figure 2 - Power Output & Gain vs. Power Input. -20 18.5 -30 -30 IMD IMD 17.5 Gain dB -40 dBc dBc -40 -50 16.5 -60 20 40 60 80 100 Pout W PEP IMD3 at Idq=1.5A IMD3 at Idq=2.5A -50 120 140 160 180 f1 = 175.0 MHz f2 = 175.1 MHz VDS = 28V 0 0.5 IMD3 IMD5 Gain 1 Idq A 1.5 2 15.5 2.5 f1 = 175.0MHz f2 = 175.1MHz Pout = 130W PEP Vds = 28V Figure 3 - IMD vs. Output Power. Figure 4 - IMD & Gain vs. Idq Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 2/00 D1027UK 110 0 12 0 13 14 0 100 90 80 70 60 50 40 15 0 30 0 180 5 2 10 0.5 0.2 160 20 170 10 0.2 180 10 1 2 5 0 0.5 0 175 225 -170 ZLopt -10 -160 -20 0 -15 -30 Impedance measured Drain - Drain 40 -1 -4 0 0 -5 -1 30 Matching Network Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk -80 -90 -100 R 4 4.5 3.5 jX -0.5 -4 -5 -70 -110 f MHz 175 200 225 ZL -60 -12 0 Z Lopt Prelim. 2/00 D1027UK 110 0 12 0 13 14 0 100 90 80 70 60 50 40 15 0 30 0 180 5 2 10 0.5 0.2 160 20 170 10 0.2 180 0 175 0.5 10 1 2 5 0 200 -170 225 ZSopt -10 -160 -20 Matching Network 0 -15 -30 40 -1 Impedance measured Gate - Gate -4 0 0 -5 -1 30 Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk -60 -70 -80 -90 -100 -110 -12 0 ZS opt f MHz 175 200 225 Zs R 1.6 1.6 2.3 jX -1.5 -1.2 -2 Prelim. 2/00 D1027UK L2 G a te - B ia s 100n 1n 10k 1 L1 D1027UK 12 T4 1n 100n 1000u 820K 28V 100k T2 680pF T6 1u T1 2 -1 8 p F 47pF 90pF 2 -1 8 p F 680pF 1u T5 T3 D1027UK D1027UK 175MHz TEST FIXTURE T1,2,3 T4,5 T6 L1 L2 7cm Storm Products EXE18 19/30 S1TW coaxial cable on Siemens A1 x 1 2-hole core. 14cm Storm Products EXE18 19/30 S1TW coaxial cable. 11cm Storm Products EXE18 19/30 S1TW coaxial cable 6 turns 1.2mm dia wire, 5mm internal diameter 1.5 turns 0.9mm dia wire on Siemens A1 x 1 2 hole core Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 2/00 |
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