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 TetraFET
D1027UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C (2 pls)
B
G (typ)
2 1
H D
3
P (2 pls) A
5
4
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W - 28V - 175MHz PUSH-PULL
FEATURES
* SIMPLIFIED AMPLIFIER DESIGN
E (4 pls) F I
N
M
O
J
K
* SUITABLE FOR BROAD BAND APPLICATIONS
DRAIN 1 GATE 2
DR
PIN 1 PIN 3 PIN 5 SOURCE (COMMON) DRAIN 2 GATE 1 DIM A B C D E F G H I J K M N O P Millimetres 19.05 10.77 45 9.78 5.71 27.94 1.52R 10.16 22.22 0.13 2.72 1.70 5.08 34.03 1.57R Tol. 0.50 0.13 5 0.13 0.13 0.13 0.13 0.13 MAX 0.02 0.13 0.13 0.50 0.13 0.08 PIN 2 PIN 4
* LOW Crss * SIMPLE BIAS CIRCUITS
Inches 0.75 0.424 45 0.385 0.225 1.100 0.060R 0.400 0.875 0.005 0.107 0.067 0.200 1.340 0.062R
Tol. 0.020 0.005 5 0.005 0.005 0.005 0.005 0.005 MAX 0.001 0.005 0.005 0.020 0.005 0.003
* LOW NOISE * HIGH GAIN - 13 dB MINIMUM
APPLICATIONS
* VHF/UHF COMMUNICATIONS from 1 MHz to 200 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated)
PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain - Source Breakdown Voltage Gate - Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 438W 70V 20V 30A -65 to 150C 200C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 2/00
D1027UK
ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter Test Conditions Min.
PER SIDE
BVDSS IDSS IGSS VGS(th) gfs Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Gate Threshold Voltage* Forward Transconductance* Gate Threshold Voltage Matching Between Sides VGS = 0 VDS = 28V VGS = 20V ID = 10mA VDS = 10V ID = 10mA ID = 100mA VGS = 0 VDS = 0 VDS = VGS ID = 6A VDS = VGS 1 4.8 70
Typ.
Max. Unit
V 6 1 7 mA
mA
V mhos
VGS(th)match
0.1
V
TOTAL DEVICE
GPS Common Source Power Gain Drain Efficiency Load Mismatch Tolerance Input Capacitance Output Capacitance
h
PO = 150W VDS = 28V f = 175MHz IDQ = 2.4A
13 50 20:1 VGS = -5V f = 1MHz VGS = 0 VGS = 0 f = 1MHz f = 1MHz 360 180 15
dB % -- pF pF pF
VSWR Ciss Coss Crss
PER SIDE
VDS = 28V VDS = 28V
Reverse Transfer Capacitance VDS = 28V
* Pulse Test:
Pulse Duration = 300 ms , Duty Cycle 2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
RTHj-case Thermal Resistance Junction - Case Max. 0.4C / W
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 2/00
D1027UK
400 350 300 250
P out
100 90 80 70
Drain Efficiency P out
400 350 300 250 200
% W
f = 175MHz Idq = 2A Vds = 28V
20
18
Gain
200
W
60 50
f = 175MHz Idq = 2A Vds = 28V
16
dB
150 100 50 0 0 2 4 6 8 10
P in W
Pout Drain Efficiency
150 100 50 0 0 2 4 6 8 10
P in W
2nd harmonic = -28dBc
Pout Gain
40 30
14
12
14
16
18
20 20
12
14
16
18
12 20
3rd harmonic = -40dBc output at 350W
Figure 1 - Power Output and Efficiency vs. Power Input.
-20
Figure 2 - Power Output & Gain vs. Power Input.
-20 18.5
-30 -30
IMD IMD
17.5
Gain dB
-40
dBc
dBc
-40 -50
16.5
-60 20 40 60 80 100
Pout W PEP
IMD3 at Idq=1.5A IMD3 at Idq=2.5A
-50 120 140 160 180
f1 = 175.0 MHz f2 = 175.1 MHz VDS = 28V
0
0.5
IMD3 IMD5 Gain
1
Idq A
1.5
2
15.5 2.5
f1 = 175.0MHz f2 = 175.1MHz
Pout = 130W PEP Vds = 28V
Figure 3 - IMD vs. Output Power.
Figure 4 - IMD & Gain vs. Idq
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 2/00
D1027UK
110
0 12
0 13 14 0
100
90
80
70
60
50 40
15 0
30
0
180 5 2 10 0.5 0.2
160
20
170
10
0.2
180
10
1
2
5
0
0.5
0
175 225
-170
ZLopt
-10
-160
-20
0 -15
-30
Impedance measured Drain - Drain
40 -1 -4 0 0 -5 -1 30
Matching Network
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
-80
-90
-100
R 4 4.5 3.5
jX -0.5 -4 -5
-70
-110
f MHz 175 200 225
ZL
-60
-12 0
Z Lopt
Prelim. 2/00
D1027UK
110
0 12
0 13 14 0
100
90
80
70
60
50 40
15 0
30
0
180 5 2 10 0.5 0.2
160
20
170
10
0.2
180
0 175
0.5
10
1
2
5
0
200
-170
225
ZSopt
-10
-160
-20
Matching Network
0 -15
-30
40 -1
Impedance measured Gate - Gate
-4 0 0 -5 -1 30
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
-60
-70
-80
-90
-100
-110
-12 0
ZS opt
f MHz 175 200 225
Zs R 1.6 1.6 2.3 jX -1.5 -1.2 -2
Prelim. 2/00
D1027UK
L2
G a te - B ia s
100n 1n
10k 1 L1 D1027UK 12 T4 1n
100n 1000u 820K
28V
100k
T2
680pF T6
1u T1 2 -1 8 p F 47pF 90pF 2 -1 8 p F
680pF 1u T5 T3 D1027UK
D1027UK 175MHz TEST FIXTURE
T1,2,3 T4,5 T6 L1 L2 7cm Storm Products EXE18 19/30 S1TW coaxial cable on Siemens A1 x 1 2-hole core. 14cm Storm Products EXE18 19/30 S1TW coaxial cable. 11cm Storm Products EXE18 19/30 S1TW coaxial cable 6 turns 1.2mm dia wire, 5mm internal diameter 1.5 turns 0.9mm dia wire on Siemens A1 x 1 2 hole core
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 2/00


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